→ Schlecht, M.-T., Malzer, S., Preu, S., & Weber, H.B. (2019). An efficient Terahertz rectifier on the graphene/SiC materials platform. Scientific Reports, 9. https://dx.doi.org/10.1038/s41598-019-47606-6 |
→ Weiße, J., Hauck, M., Krieger, M., Bauer, A.J., & Erlbacher, T. (2019). Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440). AIP Advances, 9(7). https://dx.doi.org/10.1063/1.5118666 |
→ Weiße, J., Hauck, M., Krieger, M., Bauer, A., & Erlbacher, T. (2019). Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC. AIP Advances, 9(5), 055308. https://dx.doi.org/10.1063/1.5096440 |
→ Hauck, M., & Krieger, M. (2019). Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs. Elektronikpraxis - Profiline, Sonderheft Leistungselektronik und Stromversorgungen I, 16-18. |
→ Kißlinger, F., Rienmüller, D., Ott, C., Kampert, E., & Weber, H.B. (2019). Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect. Annalen Der Physik. https://dx.doi.org/10.1002/andp.201800188 |
→ Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M.,... Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances, 9(7), 3570-3576. https://dx.doi.org/10.1039/c8ra09069f |
→ Berens, J., Rasinger, F., Aichinger, T., Heuken, M., Krieger, M., & Pobegen, G. (2019). Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET. IEEE Transactions on Electron Devices, 66(3), 1213-1217. https://dx.doi.org/10.1109/TED.2019.2891820 |
→ Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8 |
→ Heide, C., Boolakee, T., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2019). Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime. New Journal of Physics. https://dx.doi.org/10.1088/1367-2630/ab13ce |
→ Xie, Y., Wang, G., Wang, Z., Nan, T., Wang, H., Wang, Y.,... Ma, X. (2019). Growth of Monolayer WS2Single Crystals with Atmospheric Pressure CVD: Role of Temperature. In MRS Advances (pp. 255-262). Materials Research Society. |
→ Rasinger, F., Prohinig, J., Schulze, H., Schulze, H.J., & Pobegen, G. (2019). Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201900197 |
→ Heide, C., Higuchi, T., Ullmann, K., Weber, H.B., & Hommelhoff, P. (2019). Lightwave-controlled electron dynamics in graphene. In EPJ Web Conf. (Eds.), 205 (pp. 05002). |
→ Heide, C., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2018). Coherent Electron Trajectory Control in Graphene. Physical Review Letters, 121. https://dx.doi.org/10.1103/PhysRevLett.121.207401 |
→ Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859 |
→ Niesner, D., Hauck, M., Shrestha, S., Levchuk, I., Matt, G., Osvet, A.,... Fauster, T. (2018). Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect. Proceedings of the National Academy of Sciences of the United States of America, 115(38), 9509-9514. https://dx.doi.org/10.1073/pnas.1805422115 |
→ Meingast, L., Kolesnik-Gray, M., Siebert, M., Abellan Saez, G., Wild, S., Lloret Segura, V.J.,... Krstic, V. (2018). Effect of TCNQ Layer Cover on Oxidation Dynamics of Black Phosphorus. Physica Status Solidi-Rapid Research Letters, 12(8). https://dx.doi.org/10.1002/pssr.201800179 |
→ Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277 |
→ Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.184 |
→ Preu, S., Müller-Landau, C., Malzer, S., Weber, H.B., Döhler, G., Winnerl, S.,... Gossard, A. (2018). Terahertz generation with ballistic photodiodes under pulsed operation. Semiconductor Science and Technology, 33(11). https://dx.doi.org/10.1088/1361-6641/aae5e4 |
→ Kißlinger, F., Popp, M.A., Jobst, J., Shallcross, S., & Weber, H.B. (2017). Charge-carrier transport in large-area epitaxial graphene. Annalen Der Physik, 2017. https://dx.doi.org/10.1002/andp.201700048 |