Institut National Polytechnique de Grenoble - Grenoble Institute of Technology


Universität / Hochschule

Standort der Organisation:
Grenoble, Frankreich


Forschungsprojekte mit FAU-Wissenschaftlerinnen und Wissenschaftlern


(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01.01.2009 - 31.12.2011)
(Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates):
MANSiC: Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
Gerhard Pensl
(01.01.2007 - 31.12.2010)


Publikationen in Kooperation mit FAU-Wissenschaftlerinnen und Wissenschaftlern


Salje, E.K.H., Carpenter, M.A., Nataf, G.F., Picht, G., Webber, K., Weerasinghe, J.,... Bellaiche, L. (2013). Elastic excitations in BaTiO3 single crystals and ceramics: Mobile domain boundaries and polar nanoregions observed by resonant ultrasonic spectroscopy. Physical Review B, 87. https://dx.doi.org/10.1103/PhysRevB.87.014106
Pons, M., Nishizawa, S.-I., Wellmann, P., Blanquet, E., Chaussende, D., Dedulle, J., & Madar, R. (2009). Silicon carbide growth: C/Si ratio evaluation and modeling. Materials Science Forum, 600-603, 83-88. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.83
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520
Wellmann, P., & Pons, M. (2007). Numerical modeling and experimental verification of modified-PVT crystal growth of SiC. Journal of Crystal Growth, 303(1), 337-341. https://dx.doi.org/10.1016/j.jcrysgro.2006.11.328
Chaussende, D., Wellmann, P., & Pons, M. (2007). Status of SiC bulk growth processes. Journal of Physics D-Applied Physics, 40(20), 6150-6158. https://dx.doi.org/10.1088/0022-3727/40/20/S02
Chaussende, D., Wellmann, P., Ucar, M., Pons, M., & Madar, R. (2006). In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging. Materials Science Forum, 527-529, 63-66. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.63
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://dx.doi.org/10.1002/pssc.200564148
Wellmann, P., Müller, R., & Pons, M. (2006). Modeling and experimental verification of SiC M-PVT bulk crystal growth. Materials Science Forum, 527-529, 75-78. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.75
Nishizawa, S.-I., Wellmann, P., & Pons, M. (2006). SiC epitaxial structure growth: evaluation and modeling. In M. Syväjärvi and R. Yakimova (Eds.), Wide Band Gap Materials and New Developments. (pp. 69-89). India: Transworld Research Network.
Wellmann, P., & Pons, M. (2006). Silicon carbide CVD for electronic device applications. Chemical Vapor Deposition, 12(8-9), 463-464. https://dx.doi.org/10.1002/cvde.200690018
Pons, M., Wellmann, P., Nishizawa, S.-I., Blanquet, E., Dedulle, J., & Chaussende, D. (2006). Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. Materials Research Society Symposium - Proceedings, 911. https://dx.doi.org/10.1557/PROC-0911-B04-02
Wellmann, P., & Pons, M. (Eds.) (2006). Special Issue on Silicon Carbid CVD for Electronic Device Applications. Weinheim: Wiley-VCH.
Wellmann, P., Müller, R., Queren, D., Sakwe, A., & Pons, M. (2006). Vapor growth of SiC bulk crystals and its challenge of doping. Surface & Coatings Technology, 201(7), 4026-4031. https://dx.doi.org/10.1016/j.surfcoat.2006.08.033
Wellmann, P., Müller, R., Pons, M., Thuaire, A., Crisci, A., Mermoux, M., & Auvray, L. (2005). Micro-optical characterization study of highly p-type doped SiC : Al wafers. Materials Science Forum, 483, 393-396. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.393
Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,... Pons, M. (2005). Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.25
Pons, M., Nishizawa, S.-I., Wellmann, P., Ucar, M., Blanquet, E., Dedulle, J.,... Madar, R. (2005). Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics. ECS Transactions, 2005-9, 1-12.
Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,... Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. physica status solidi (a), 202(4), 598-601. https://dx.doi.org/10.1002/PSSA.200460436
Pons, M., Blanquet, E., Dedulle, J., Ucar, M., Wellmann, P., Danielsson, Ö.,... Madar, R. (2005). Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes. Materials Science Forum, 483, 3-8. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.3
Wellmann, P., Desperrier, P., Müller, R., Straubinger, T., Winnacker, A., Baillet, F.,... Pons, M. (2005). SiC single crystal growth by a modified physical vapor transport technique. Journal of Crystal Growth, 275(1-2), E555-E560. https://dx.doi.org/10.1016/j.jcrysgro.2004.11.070

Zuletzt aktualisiert 2016-24-06 um 07:40