Institut National Polytechnique de Grenoble - Grenoble Institute of Technology

Universität / Hochschule

Standort der Organisation:
Grenoble, Frankreich

Forschungsprojekte mit FAU-Wissenschaftlerinnen und Wissenschaftlern

(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01.01.2009 - 31.12.2011)
(Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates):
MANSiC: Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
Gerhard Pensl
(01.01.2007 - 31.12.2010)

Publikationen in Kooperation mit FAU-Wissenschaftlerinnen und Wissenschaftlern

Salje, E.K.H., Carpenter, M.A., Nataf, G.F., Picht, G., Webber, K., Weerasinghe, J.,... Bellaiche, L. (2013). Elastic excitations in BaTiO3 single crystals and ceramics: Mobile domain boundaries and polar nanoregions observed by resonant ultrasonic spectroscopy. Physical Review B, 87.
Pons, M., Nishizawa, S.-I., Wellmann, P., Blanquet, E., Chaussende, D., Dedulle, J., & Madar, R. (2009). Silicon carbide growth: C/Si ratio evaluation and modeling. Materials Science Forum, 600-603, 83-88.
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256.
Wellmann, P., & Pons, M. (2007). Numerical modeling and experimental verification of modified-PVT crystal growth of SiC. Journal of Crystal Growth, 303(1), 337-341.
Chaussende, D., Wellmann, P., & Pons, M. (2007). Status of SiC bulk growth processes. Journal of Physics D-Applied Physics, 40(20), 6150-6158.
Chaussende, D., Wellmann, P., Ucar, M., Pons, M., & Madar, R. (2006). In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging. Materials Science Forum, 527-529, 63-66.
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561.
Wellmann, P., Müller, R., & Pons, M. (2006). Modeling and experimental verification of SiC M-PVT bulk crystal growth. Materials Science Forum, 527-529, 75-78.
Nishizawa, S.-I., Wellmann, P., & Pons, M. (2006). SiC epitaxial structure growth: evaluation and modeling. In M. Syväjärvi and R. Yakimova (Eds.), Wide Band Gap Materials and New Developments. (pp. 69-89). India: Transworld Research Network.
Wellmann, P., & Pons, M. (2006). Silicon carbide CVD for electronic device applications. Chemical Vapor Deposition, 12(8-9), 463-464.
Pons, M., Wellmann, P., Nishizawa, S.-I., Blanquet, E., Dedulle, J., & Chaussende, D. (2006). Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. Materials Research Society Symposium - Proceedings, 911.
Wellmann, P., & Pons, M. (Eds.) (2006). Special Issue on Silicon Carbid CVD for Electronic Device Applications. Weinheim: Wiley-VCH.
Wellmann, P., Müller, R., Queren, D., Sakwe, A., & Pons, M. (2006). Vapor growth of SiC bulk crystals and its challenge of doping. Surface & Coatings Technology, 201(7), 4026-4031.
Wellmann, P., Müller, R., Pons, M., Thuaire, A., Crisci, A., Mermoux, M., & Auvray, L. (2005). Micro-optical characterization study of highly p-type doped SiC : Al wafers. Materials Science Forum, 483, 393-396.
Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,... Pons, M. (2005). Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30.
Pons, M., Nishizawa, S.-I., Wellmann, P., Ucar, M., Blanquet, E., Dedulle, J.,... Madar, R. (2005). Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics. ECS Transactions, 2005-9, 1-12.
Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,... Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. physica status solidi (a), 202(4), 598-601.
Pons, M., Blanquet, E., Dedulle, J., Ucar, M., Wellmann, P., Danielsson, Ö.,... Madar, R. (2005). Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes. Materials Science Forum, 483, 3-8.
Wellmann, P., Desperrier, P., Müller, R., Straubinger, T., Winnacker, A., Baillet, F.,... Pons, M. (2005). SiC single crystal growth by a modified physical vapor transport technique. Journal of Crystal Growth, 275(1-2), E555-E560.

Zuletzt aktualisiert 2016-24-06 um 07:40