Modelling the Injection Efficiency of III-V Core-Shell Nanowire Lasers with InGaAs Active Gain Media
Römer F, Werner S, Koblmuller G, Witzigmann B (2026)
Publication Type: Conference contribution
Publication year: 2026
Publisher: IEEE Computer Society
Pages Range: 9-10
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Cork, IRL
ISBN: 9798331563448
DOI: 10.1109/NUSOD69851.2026.11687856
Abstract
The integration of III/V core-shell nanowire semiconductor lasers with silicon and silicon on insulator establishes a platform for efficient and compact light sources in photonic integrated circuits. Laser operation by optical excitation has been demonstrated. However, electrical pumping for stimulated emission requires a careful design of the electronic structure to optimize the carrier injection and reduce the impact of nonradiative recombination. To optimize the design we propose physics based modelling. In this work we investigate the impact of the nanowire geometry and contact arrangement on the internal quantum efficiency and injection efficiency by means of carrier transport and electroluminescence simulations. We show that the contact design affects the electroluminescence uniformity and thus the optical gain.
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Germany (DE)How to cite
APA:
Römer, F., Werner, S., Koblmuller, G., & Witzigmann, B. (2026). Modelling the Injection Efficiency of III-V Core-Shell Nanowire Lasers with InGaAs Active Gain Media. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 9-10). Cork, IRL: IEEE Computer Society.
MLA:
Römer, Friedhard, et al. "Modelling the Injection Efficiency of III-V Core-Shell Nanowire Lasers with InGaAs Active Gain Media." Proceedings of the 26th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2026, Cork, IRL IEEE Computer Society, 2026. 9-10.
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