Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence

Peloso MP, Sern Lew J, Trupke T, Peters M, Utama R, Aberle AG (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 99

Article Number: 221915

Journal Issue: 22

DOI: 10.1063/1.3664134

Abstract

A line-imaging spectrometer is used to collect the spectrum of electroluminescence at each point of a multicrystalline silicon wafer solar cell. Characterization of the diffusion lengths of minority charge carriers is developed using a specific feature of the luminescence spectral signature. It is shown that various material and device parameters affecting the luminescence spectral signature may be determined independently. Diffusion length images derived from the proposed hyperspectral method are assessed against diffusion lengths obtained by light beam induced current measurements. Using hyperspectral imaging, diffusion lengths of minority charge carriers in a silicon wafer solar cell can be determined. © 2011 American Institute of Physics.

Involved external institutions

National University of Singapore (NUS) SG Singapore (SG) REC Solar Holdings AS NO Norway (NO) University of New South Wales (UNSW) AU Australia (AU)

How to cite

APA:

Peloso, M.P., Sern Lew, J., Trupke, T., Peters, M., Utama, R., & Aberle, A.G. (2011). Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence. Applied Physics Letters, 99(22). https://doi.org/10.1063/1.3664134

MLA:

Peloso, Matthew P., et al. "Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence." Applied Physics Letters 99.22 (2011).

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