Towards Solid-State High-Power 13.56 MHz Impedance Matching Using Self-Biased SiC-MOSFET-Switched Capacitors

Schwab N, Vennemann P, Gesche R, Carlowitz C, Vossiek M (2026)

Publication Type: Conference contribution

Publication year: 2026

Journal

IEEE MTT-S International Microwave Symposium Digest Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 397-400

Conference Proceedings Title: IEEE MTT-S International Microwave Symposium Digest

Event location: Boston, MA US

ISBN: 9798331547660

DOI: 10.1109/IMSRFTT43070.2026.11602546

Abstract

Radio-frequency (RF) high-power (>=500 W) plasma systems require fast, tunable impedance matching. However, conventional variable vacuum capacitor (VVC)-based networks suffer from slow mechanical tuning capabilities and wear. Solid-state solutions based on GaN/SiC MOSFETs offer a faster alternative. However, existing approaches either rely on complex multi-device structures or complex control, or are limited in power capability. This work introduces for the first time a low complexity, high-power, switched-capacitor impedance tuning network approach that uses a single MOSFET and a preceding capacitor as the basic switching unit. The method makes use of self-biasing the transistor via its body diode to reduce drain-source capacitance. Furthermore, a topology evaluation framework was implemented to identify networks that reduce the current and voltage stress on the transistors to an acceptable level. The first demonstrator realized using this method was measured at 500 W and 13.56 MHz, paving the way for solid-state, high-power impedance matching.

Authors with CRIS profile

Niklas Schwab Lehrstuhl für Hochfrequenztechnik (LHFT) Christian Carlowitz Lehrstuhl für Hochfrequenztechnik (LHFT) Martin Vossiek Lehrstuhl für Hochfrequenztechnik (LHFT)

How to cite

APA:

Schwab, N., Vennemann, P., Gesche, R., Carlowitz, C., & Vossiek, M. (2026). Towards Solid-State High-Power 13.56 MHz Impedance Matching Using Self-Biased SiC-MOSFET-Switched Capacitors. In IEEE MTT-S International Microwave Symposium Digest (pp. 397-400). Boston, MA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Schwab, Niklas, et al. "Towards Solid-State High-Power 13.56 MHz Impedance Matching Using Self-Biased SiC-MOSFET-Switched Capacitors." Proceedings of the 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026, Boston, MA Institute of Electrical and Electronics Engineers Inc., 2026. 397-400.

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