A 24 GHz Self-Biased Class-F3 Voltage-Controlled Oscillator for High-Speed Wireline Transceivers in 12 nm FinFET Technology

Berwald A, Vilyuk K, Weninger J, Engelmann A, Scheller K, Weigel R, Franchi N (2026)

Publication Type: Conference contribution

Publication year: 2026

Journal

IEEE MTT-S International Microwave Symposium Digest Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 279-282

Conference Proceedings Title: IEEE MTT-S International Microwave Symposium Digest

Event location: Boston, MA, USA

ISBN: 9798331547660

DOI: 10.1109/IMSRFTT43070.2026.11602533

Abstract

A self-biased Class-F3 topology demonstrating a good phase noise performance is proposed in this paper. It exhibits a phase noise of 96 dBc /Hz at 1 MHz offset from the carrier at 24.0 GHz over 22.5-25.8 GHz tuning range with a figure-of-merit of 173.0 dBc/Hz. With an exceptionally compact core area of only 0.013 mm², the proposed voltage-controlled oscillator (VCO) demonstrates excellent suitability for high-speed data link applications implemented in advanced technology nodes, thereby enabling cost-efficient integration. The oscillator is manufactured on GlobalFoundries 12LP+ FinFET CMOS technology and draws only 8.28 mA from a 1.4 V supply.

Authors with CRIS profile

Alexander Berwald Lehrstuhl für Intelligente Technische Elektronik und Systeme Konstantin Vilyuk Lehrstuhl für Intelligente Technische Elektronik und Systeme Jonas Weninger Lehrstuhl für Intelligente Technische Elektronik und Systeme Andre Engelmann Lehrstuhl für Intelligente Technische Elektronik und Systeme Kai Scheller Lehrstuhl für Intelligente Technische Elektronik und Systeme Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Norman Franchi Lehrstuhl für Intelligente Technische Elektronik und Systeme

How to cite

APA:

Berwald, A., Vilyuk, K., Weninger, J., Engelmann, A., Scheller, K., Weigel, R., & Franchi, N. (2026). A 24 GHz Self-Biased Class-F3 Voltage-Controlled Oscillator for High-Speed Wireline Transceivers in 12 nm FinFET Technology. In IEEE MTT-S International Microwave Symposium Digest (pp. 279-282). Boston, MA, USA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Berwald, Alexander, et al. "A 24 GHz Self-Biased Class-F3 Voltage-Controlled Oscillator for High-Speed Wireline Transceivers in 12 nm FinFET Technology." Proceedings of the 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026, Boston, MA, USA Institute of Electrical and Electronics Engineers Inc., 2026. 279-282.

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