Temperature dependent DC-bias effects in polycrystalline CaTiSiO5

Olaseinde FK, Xie L, Cicconi MR, Taniguchi H, Webber KG (2026)

Publication Type: Journal article

Publication year: 2026

Journal

Book Volume: 317

Article Number: 122546

DOI: 10.1016/j.actamat.2026.122546

Abstract

As power devices become increasingly crucial to advanced technologies, the development of passive components, such as capacitors, has gained significant research attention. Among various candidate materials, CaTiSiO5 stands out as a particularly promising lead-free dielectric due to its positive-bias dependence of dielectric permittivity, which originates from its antipolar structure. Although considerable efforts have been devoted to studying the effects of chemical substitutions on the crystal structure and temperature-dependent dielectric properties of CaTiSiO5, research on its electrical response under large electric fields remains limited, particularly regarding its behavior across wide temperature ranges relevant to practical applications. Remarkably, CaTiSiO5 exhibits a positive DC-bias effect at room temperature, where the permittivity increases with applied electric field. This behavior is significantly different from conventional ferroelectric capacitors, arising from the coupled effects of electric field and temperature on phase structure modulation. In this work, the temperature-dependent DC-bias effect was characterized from -30 °C to 150 °C, where both positive and negative DC-bias effects were observed as temperature changes, providing important insight into the role of the high temperature antiferroelectric-paraelectric phase transition observed at approximately 170 °C using temperature-dependent Raman spectroscopy as well as small signal dielectric and elastic measurements. These data are contrasted to large-field polarization – electric field and electric-field-dependent relative permittivity measurements to more fully understand its antiferroelectric behavior and dielectric response under large electric fields, providing valuable guidance for the design of next-generation power electronic devices.

Authors with CRIS profile

Involved external institutions

Nagoya University / 名古屋大学 Japan (JP)

How to cite

APA:

Olaseinde, F.K., Xie, L., Cicconi, M.R., Taniguchi, H., & Webber, K.G. (2026). Temperature dependent DC-bias effects in polycrystalline CaTiSiO5. Acta Materialia, 317. https://doi.org/10.1016/j.actamat.2026.122546

MLA:

Olaseinde, Femi Kehinde, et al. "Temperature dependent DC-bias effects in polycrystalline CaTiSiO5." Acta Materialia 317 (2026).

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