Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC

Jayaprakash H, Belanche M, Csato C, Krippendorf F, Grossner U, Rueb M (2026)

Publication Type: Journal article

Publication year: 2026

Journal

Defect and Diffusion Forum Trans Tech Publications

Book Volume: 452

Pages Range: 65-71

DOI: 10.4028/p-zY1ER5

Abstract

The extensive study of point defects in 4H-SiC over the past two decades has led to a comprehensive understanding of their influence on device performance. Specifically, the dominant defects Z1/2 and EH6/7 have been well-quantified and are now formally assigned to specific states of the carbon vacancy. Building upon this foundational knowledge, our study investigates the defect landscape created by the novel process of Energy-Filtered Ion Implantation (EFII). Using DLTS and MCTS measurements conducted within the temperature range of 50−650 K, we analyzed the trap levels created by 19 MeV Nitrogen implantation in as-grown 4H-SiC epitaxial wafer. The majority carrier (electrons) trap with DLTS measurements reveal the presence of prominent peaks associated with carbon complexes, labeled as ON0a (Ec-0.586 eV) and ON0b / Z1/2 at (Ec-0.681 eV), along with smaller peaks in the shallow region and a broader peak identified as EH6/7 at (Ec-1.53 eV) as the deepest peak. Notably, the close proximity of the ON0b peak to the well-known Z1/2 peak poses a significant challenge, preventing the definitive assignment of a defect structure to the known carbon complexes. On the contrary, minority carrier (holes) trap detection with MCTS reveal B-center at (EV+ 0.24 eV) and (EV + 0.33 eV) and a negligible shallow peak at (EV + 0.22 eV) assigned as X center. There was no indication of D-center formation in the EFII implanted samples.

Involved external institutions

Ernst-Abbe-Hochschule Jena (FH/EAH Jena) / Ernst Abbe University of Applied Sciences Jena DE Germany (DE) Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich CH Switzerland (CH) mi2-factory GmbH DE Germany (DE)

How to cite

APA:

Jayaprakash, H., Belanche, M., Csato, C., Krippendorf, F., Grossner, U., & Rueb, M. (2026). Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC. Defect and Diffusion Forum, 452, 65-71. https://doi.org/10.4028/p-zY1ER5

MLA:

Jayaprakash, Hitesh, et al. "Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC." Defect and Diffusion Forum 452 (2026): 65-71.

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