Wein K, Bertram F, Schmidt G, Veit P, Christen J, Faber S, Witzigmann B, Heuken M, Zweipfenning T, Kalisch H, Vescan A, Debald A (2023)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2023
Publisher: SPIE
A lateral p+n GaN junction with a 10 µm drift layer has been characterized by combined Cathodoluminescence (CL) and Electron-Beam-Induced Current (EBIC) measurements performed at different temperatures. A vertical CL linescan across the pn-junction shows the evolution of luminescence in growth direction. The distinct changes of local emission in the space charge region are correlated with temperature dependent EBIC profiles. In particular in the drift zone, a mono-exponential behavior with a large characteristic length was observed. These profiles are correlated to the calculated band profiles for quantifying the evolution of electrical fields in the space charge region and drift zone.
APA:
Wein, K., Bertram, F., Schmidt, G., Veit, P., Christen, J., Faber, S.,... Debald, A. (2023). Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation. In Proceedings of the Gallium Nitride Materials and Devices XVIII. SPIE.
MLA:
Wein, Konstantin, et al. "Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation." Proceedings of the Gallium Nitride Materials and Devices XVIII SPIE, 2023.
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