Kölle S, Römer F, Witzigmann B (2026)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2026
Publisher: SPIE
Pages Range: PC138960S
The material system AlGaN/AlN allows for light emitters in the deep UV range. This presentation focuses on a theoretical study of stimulated emission for this material system. High differential gain has been reported for both thin wells (below 3nm thickness) and thick wells (above 9nm thickness). The stimulated emission evolves from a complex interplay due to the presence of polarization charges at the hetero interfaces, strong excitonic effects, alloy fluctuations and the underlying semiconductor band structure. We discuss the impact of each of those contributions by a microscopic model, compare gain spectra to experimental data, and propose configurations for maximum material gain in deep UV lasers.
APA:
Kölle, S., Römer, F., & Witzigmann, B. (2026). Numerical study of stimulated emission in AlGaN quantum-wells for deep ultraviolet laser diodes. In Proceedings of the Gallium Nitride Materials and Devices XXI (pp. PC138960S). SPIE.
MLA:
Kölle, Sebastian, Friedhard Römer, and Bernd Witzigmann. "Numerical study of stimulated emission in AlGaN quantum-wells for deep ultraviolet laser diodes." Proceedings of the Gallium Nitride Materials and Devices XXI SPIE, 2026. PC138960S.
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