50-W GaN-on-Si Doherty Power Amplifier at 7 GHz

Deublein A, Musolff C, Riess D, Ruggiu A, Etzel JF, Weigel R, Fischer G, Franchi N, Loose M (2026)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2026

Publisher: IEEE

Pages Range: 441 - 444

Event location: London, United Kingdom GB

URI: https://ieeexplore.ieee.org/document/11748268

DOI: 10.23919/EuMC69230.2026.11748268

Abstract

A 50-W GaN-on-Si Doherty PA (DPA) designed for band 5G NR n104 is presented. The PCB-based amplifier implements integrated passive devices and custom MMICs fabricated in Infineon’s RFGaN technology. Measurements across 6.6 – 7.1GHz demonstrate 46.9 – 47.6dBm output power with 55 – 61% saturated drain efficiency and 48 – 53% drain efficiency at 6 dB output-power back-off. Investigation of an initial combiner design revealed abrupt gain compression within the Doherty region caused by load-impedance non-uniformities along an electrically wide transistor manifold. A revised combiner design reducing the impedance non-uniformity successfully mitigates this behavior. The results demonstrate that electrical width and the associated load-impedance variations become important design considerations for high-power RFPAs and may require tree-structured matching networks.

Authors with CRIS profile

Alexander Deublein Lehrstuhl für Intelligente Technische Elektronik und Systeme Christian Musolff Professur für Technische Elektronik David Riess Lehrstuhl für Intelligente Technische Elektronik und Systeme Jan-Felix Etzel Professur für Technische Elektronik Robert Weigel Technische Fakultät Georg Fischer Professur für Technische Elektronik Norman Franchi Lehrstuhl für Intelligente Technische Elektronik und Systeme Michael Loose Lehrstuhl für Intelligente Technische Elektronik und Systeme

How to cite

APA:

Deublein, A., Musolff, C., Riess, D., Ruggiu, A., Etzel, J.-F., Weigel, R.,... Loose, M. (2026). 50-W GaN-on-Si Doherty Power Amplifier at 7 GHz. In Proceedings of the 2026 56th European Microwave Conference (EuMC) (pp. 441 - 444). London, United Kingdom, GB: IEEE.

MLA:

Deublein, Alexander, et al. "50-W GaN-on-Si Doherty Power Amplifier at 7 GHz." Proceedings of the 2026 56th European Microwave Conference (EuMC), London, United Kingdom IEEE, 2026. 441 - 444.

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