Monolithically Integrated Doherty PA for Band n104 Massive-MIMO Arrays

Musolff C, Brech H, Deublein A, Riess D, Loose M (2026)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2026

Publisher: IEEE

Pages Range: 305 - 308

Event location: London, United Kingdom GB

URI: https://ieeexplore.ieee.org/document/11748134

DOI: 10.23919/EuMC69230.2026.11748134

Abstract

This paper presents a monolithically integrated final-stage Doherty PA delivering 2 W of average output power in band n104 (6.425 – 7.125 GHz). An innovative combiner design approach based on coupled planar inductors is introduced, which provides low insertion loss as well as favorable out-of-band termination conditions and low area usage. The final stage design reaches 46 – 48% modulated drain efficiency using a clipped 100-MHz 5G-NR signal with a PAPR of 8.1 dB while occupying a chip area of only 4 mm2, enabling cost-competitive integration on Infineon’s latest RFGaN-on-Si MMIC process. The combination of high RF performance, dense integration and low cost makes this solution a promising candidate for 6G massive-MIMO radio front-ends at FR3 frequencies.

Authors with CRIS profile

Christian Musolff Lehrstuhl für Technische Elektronik (LTE) Alexander Deublein Lehrstuhl für Intelligente Technische Elektronik und Systeme David Riess Lehrstuhl für Intelligente Technische Elektronik und Systeme Michael Loose Lehrstuhl für Intelligente Technische Elektronik und Systeme

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Musolff, C., Brech, H., Deublein, A., Riess, D., & Loose, M. (2026). Monolithically Integrated Doherty PA for Band n104 Massive-MIMO Arrays. In Proceedings of the 2026 56th European Microwave Conference (EuMC) (pp. 305 - 308). London, United Kingdom, GB: IEEE.

MLA:

Musolff, Christian, et al. "Monolithically Integrated Doherty PA for Band n104 Massive-MIMO Arrays." Proceedings of the 2026 56th European Microwave Conference (EuMC), London, United Kingdom IEEE, 2026. 305 - 308.

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