Smart Sensing of Multi-bit Resistive Memory using a Single Reference

Prabahar JR, Fey D (2025)

Publication Type: Conference contribution

Publication year: 2025

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 410-417

Conference Proceedings Title: Proceedings - 2025 28th Euromicro Conference on Digital System Design, DSD 2025

Event location: Salerno IT

ISBN: 9798331584993

DOI: 10.1109/DSD67783.2025.00063

Abstract

Emerging Non-Volatile Memories (NVMs) are increasingly being researched for multi-bit capabilities which can be exploited not only for storage (increased memory density) but also for novel applications like in-memory computing e.g. matrix vector multiplication. Such applications require readout circuits, i.e. Sense Amplifiers (SAs) which convert the resistance of the memory cell to digital data. In this work, we propose such a Sense Amplifier (SA) to distinguish between the four states of a ReRAM cell. Unlike conventional multi-bit sensing schemes which require three references to sense four states, the proposed sensing technique requires only a single voltage reference. The proposed SA uses current comparison to sense the first bit and based on the value of the sensed bit, the crucial currents of the SA are manipulated to sense the second bit. The proposed SA is very energy efficient when compared to the state-of-the-art (consuming 82.4 fJ in 130 nm process node) while avoiding the need to generate multiple voltage/current references on-chip. Requiring only 25 transistors and a single VREF, the proposed SA is one of the most compact SA among others in the state-of-the-art.

Authors with CRIS profile

John Reuben Prabahar Lehrstuhl für Informatik 3 (Rechnerarchitektur) Dietmar Fey Lehrstuhl für Informatik 3 (Rechnerarchitektur)

How to cite

APA:

Prabahar, J.R., & Fey, D. (2025). Smart Sensing of Multi-bit Resistive Memory using a Single Reference. In Daniel Casini, Francisco J. Cazorla (Eds.), Proceedings - 2025 28th Euromicro Conference on Digital System Design, DSD 2025 (pp. 410-417). Salerno, IT: Institute of Electrical and Electronics Engineers Inc..

MLA:

Prabahar, John Reuben, and Dietmar Fey. "Smart Sensing of Multi-bit Resistive Memory using a Single Reference." Proceedings of the 28th Euromicro Conference on Digital System Design, DSD 2025, Salerno Ed. Daniel Casini, Francisco J. Cazorla, Institute of Electrical and Electronics Engineers Inc., 2025. 410-417.

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