A Wideband Single-Sideband Up-Conversion Mixer in 90 nm BiCMOS for D-Band JCAS Applications

Wang D, Breun S, Kawan M, Scheller K, Weigel R, Franchi N (2026)

Publication Language: English

Publication Type: Conference contribution, Original article

Publication year: 2026

Publisher: IEEE

Event location: Jeju, Korea

URI: https://ieeexplore.ieee.org/document/11378944

DOI: 10.1109/APMC65046.2025.11378944

Abstract

This paper presents a D-band single-sideband (SSB) mixer for future 6G joint communication and sensing (JCAS) systems, fabricated in 90nm SiGe BiCMOS (fT/fmax = 300/500GHz). The design employs a double-balanced Gilbert cell and fully integrated IQ conditioning for LO and IF, enabling high sideband suppression up to 35dBc. A compact 0.045mm2 hybrid coupler based on slow-wave transmission lines (SWTLs) generates wideband LO quadrature signals. The proposed mixer achieves a 7.6dB conversion gain, 34.8dBc LO suppression, and –10.5dBm OP1dB, with a 50GHz LO bandwidth resulting in a RF output bandwidth of 118–168GHz, a 7GHz IF modulation bandwidth, and 122.1mW DC power consumption.

Authors with CRIS profile

Dingan Wang Lehrstuhl für Intelligente Technische Elektronik und Systeme Sascha Breun Lehrstuhl für Intelligente Technische Elektronik und Systeme Kai Scheller Lehrstuhl für Intelligente Technische Elektronik und Systeme Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Norman Franchi Lehrstuhl für Intelligente Technische Elektronik und Systeme

How to cite

APA:

Wang, D., Breun, S., Kawan, M., Scheller, K., Weigel, R., & Franchi, N. (2026). A Wideband Single-Sideband Up-Conversion Mixer in 90 nm BiCMOS for D-Band JCAS Applications. In Proceedings of the 2025 Asia-Pacific Microwave Conference (APMC). Jeju, Korea: IEEE.

MLA:

Wang, Dingan, et al. "A Wideband Single-Sideband Up-Conversion Mixer in 90 nm BiCMOS for D-Band JCAS Applications." Proceedings of the 2025 Asia-Pacific Microwave Conference (APMC), Jeju, Korea IEEE, 2026.

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