A 157 GHz Direct Downconversion IQ Mixer in 130 nm BiCMOS Technology

Arneth N, Scheller K, Isbilen T, Breun S, Weigel R, Franchi N (2026)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2026

Event location: Jeju

ISBN: 979-8-3315-3455-4

URI: https://ieeexplore.ieee.org/document/11378731

DOI: 10.1109/APMC65046.2025.11378731

Abstract

This paper presents a D-Band IQ mixer design based on two double-balanced Gilbert cell mixers with a
differential common collector output stage to buffer the load. The quadrature phases are generated in the LO feed of the mixer using a single ended Lange coupler to create a 90 ◦phase difference, followed by Marchand baluns that produce differential signals. It was designed as a low noise amplifier (LNA) first, mixer second receiver architecture used in a D-Band communication system utilizing QPSK or higher order
modulation schemes. It’s fabricated as a standalone component for characterization in a 130 nm SiGe BiCMOS technology with ft / fmax of 250 GHz / 370 GHz. With a total power consumption of 75 mW from a 3.5 V supply the design offers a measured conversion gain of 2.5 dB at an IF frequency of 500 MHz and an input 1 dB compression point (IP1dB) of -10 dBm all while being integraded in an area of 0.56 mm2.

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How to cite

APA:

Arneth, N., Scheller, K., Isbilen, T., Breun, S., Weigel, R., & Franchi, N. (2026). A 157 GHz Direct Downconversion IQ Mixer in 130 nm BiCMOS Technology. In IEEE (Eds.), Proceedings of the 2025 Asia-Pacific Microwave Conference (APMC). Jeju, KR.

MLA:

Arneth, Nils, et al. "A 157 GHz Direct Downconversion IQ Mixer in 130 nm BiCMOS Technology." Proceedings of the 2025 Asia-Pacific Microwave Conference (APMC), Jeju Ed. IEEE, 2026.

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