Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits

Liu Y, Gradwohl KP, Lu CH, Remmele T, Yamamoto Y, Zoellner MH, Schroeder T, Boeck T, Houari A, Richter C, Albrecht M (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Journal of Applied Physics AIP Publishing

Publisher: AIP publishing

Book Volume: 132

Journal Issue: 085302

Authors with CRIS profile

Yujia Liu Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE) Leibniz-Institut für Kristallzüchtung / Leibniz Institute for Crystal Growth DE Germany (DE)

How to cite

APA:

Liu, Y., Gradwohl, K.-P., Lu, C.-H., Remmele, T., Yamamoto, Y., Zoellner, M.H.,... Albrecht, M. (2022). Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits. Journal of Applied Physics, 132(085302).

MLA:

Liu, Yujia, et al. "Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits." Journal of Applied Physics 132.085302 (2022).

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