Galvan Dominguez Y, Khaled S, Yokosawa T, Will J, Kürten S, Mc Naire M, Spiecker E, Bergaoui L, Bachmann J (2026)
Publication Type: Journal article
Publication year: 2026
Book Volume: 9
Article Number: 43
Journal Issue: 2
DOI: 10.1007/s42250-025-01521-8
Lines of indium(III) sulfides are deposited by atomic-layer additive manufacturing (ALAM) based on the reaction of indium tris(acetylacetonate) with hydrogen sulfide established in atomic layer deposition (ALD). At 160 °C, solid accretion occurs at a rate of 0.04 Å per pass. The layers are continuous, free of observable pinholes, dense, and very smooth, with a root-mean-squares roughness on the order of 0.5 nm found for deposits up to 25 nm thick. The material is nearly stoichiometric, with a S/. In ratio of 1.6 found experimentally by energy-dispersive X-ray microanalysis in cross-section examination by transmission electron microscopy, and it is polycrystalline. This work delivers In2S3 as a dopant or interfacial layer in opto-electronic devices to be prototyped and optimized by ALAM.
APA:
Galvan Dominguez, Y., Khaled, S., Yokosawa, T., Will, J., Kürten, S., Mc Naire, M.,... Bachmann, J. (2026). Atomic-layer Additive Manufacturing of Indium(III) Sulfide. Chemistry Africa, 9(2). https://doi.org/10.1007/s42250-025-01521-8
MLA:
Galvan Dominguez, Yaraset, et al. "Atomic-layer Additive Manufacturing of Indium(III) Sulfide." Chemistry Africa 9.2 (2026).
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