BiVO4/SnS2 S-scheme heterojunction for improved photocatalytic performance under visible light: charge carrier mechanism validation by DFT and electrochemical studies

Mohan P, Mallapur S, Prathibha CP, Rajesh BM, ULLAH I, Kandaiah S, Gopinathan SK, Kumar SG (2025)

Publication Type: Journal article

Publication year: 2025

Journal

Applied Physics A: Materials Science and Processing Springer Verlag (Germany)

Book Volume: 131

Article Number: 967

Journal Issue: 12

DOI: 10.1007/s00339-025-09039-z

Abstract

Pure BiVO4 and SnS2 were obtained by conventional precipitation and the hydrothermal method, respectively. The formation of a heterojunction between them was achieved through a simple ultrasonic approach. The X-ray diffraction patterns indicate the integration of monoclinic-BiVO4 and hexagonal-SnS2 and the optical response of the heterostructure shifted towards longer wavelength region. The transmission electron microscopy revealed the integration of 1D BiVO4 rod-like structure adhering to the 2D flake-like SnS2 to form stable 1D/2D heterojunctions. The electrochemical measurements and the computational studies revealed formation of the Step-scheme heterojunction between BiVO4 and SnS2 through the creation of Sn-S-V, S-V-O, O-Bi-S and Sn-S-Bi interfacial bonds, which induced a strong electric field and accelerated the separation of energetic charge carriers. The results derived from photoluminescence, photocurrent response and electrochemical impedance spectroscopy analysis collectively suggests the low degree of charge carrier recombination in the heterojunction compared to pure phase counterparts. The superoxide radicals dominated the degradation mechanism of indigo carmine dye, while holes and hydroxyl radicals contribute to the same extent. The BiVO4/SnS2 was stable even after three cycles. The findings of the current work underpin the importance of interfacial bonds to accelerate the charge carrier dynamics in S-scheme heterojunctions.

Authors with CRIS profile

IMRAN ULLAH Professur für Kristallographie und Strukturphysik

Involved external institutions

REVA University IN India (IN) Rashtreeya Vidyalaya College of Engineering / Rāshtrīya Vidyālaya Tāntrika Mahāvidyālaya IN India (IN)

How to cite

APA:

Mohan, P., Mallapur, S., Prathibha, C.P., Rajesh, B.M., ULLAH, I., Kandaiah, S.,... Kumar, S.G. (2025). BiVO4/SnS2 S-scheme heterojunction for improved photocatalytic performance under visible light: charge carrier mechanism validation by DFT and electrochemical studies. Applied Physics A: Materials Science and Processing, 131(12). https://doi.org/10.1007/s00339-025-09039-z

MLA:

Mohan, Pooja, et al. "BiVO4/SnS2 S-scheme heterojunction for improved photocatalytic performance under visible light: charge carrier mechanism validation by DFT and electrochemical studies." Applied Physics A: Materials Science and Processing 131.12 (2025).

BibTeX: Download