Solution ALD of (CH3NH3)(PbI3) Perovskite Thin Films Yields Functional Quality and Stability Superior to Classical Processing
Koch V, Zeng X, Deckert A, Büttner P, Franz E, Ding F, Anderson MA, Zhang J, Kupfer C, Mack E, Ambasta VK, Duchstein P, Dehm K, Furxhiu S, Zahl A, Frisch J, Hoga F, Stubhan T, Wilks RG, Peng Z, Brummel O, Crisp R, Zahn D, Müller C, Guldi DM, Bär M, Wisser D, Libuda J, Brabec C, Bachmann J (2025)
Publication Type: Journal article
Publication year: 2025
Journal
Article Number: e13903
Abstract
Atomic-level control of solution-processed hybrid halide perovskites is achieved experimentally by solution atomic layer deposition (sALD). This method transfers the surface chemical principles of gas-phase ALD (gALD) to precursors dissolved in the liquid phase. Circumventing limitations associated with precursor volatility, sALD broadens the portfolio of reaction chemistries usable and material classes accessible. We establish its applicability to depositing ultrathin films of ionic semiconductors by developing an sALD procedure for the most prominent halide perovskite, methylammonium triiodoplumbate (CH3NH3PbI3, ‘MAPI‘). The process saturates upon precursor dosage variation to self-limiting growth typical for ALD, as analyzed by ex-situ and in-situ techniques. sALD-deposited MAPI is highly pure, stoichiometric, and polycrystalline. When MAPI films are prepared in congruent pairs by sALD and by a state-of-the-art spin-coating method, sALD-grown films clearly outperform their spin-coated counterparts in terms of charge carrier lifetimes and stability. They exhibit high carrier mobility and yield functional light absorbing layers in solar cells.
Authors with CRIS profile
Vanessa Koch
Lehrstuhl für Chemistry of thin film materials
Xinyi Zeng
Lehrstuhl für Chemistry of thin film materials
Andreas Deckert
Lehrstuhl für Chemistry of thin film materials
Pascal Büttner
Lehrstuhl für Chemistry of thin film materials
Evanie Franz
Lehrstuhl für Katalytische Grenzflächenforschung
Fei Ding
Professur für Katalyse
Jiyun Zhang
Institute Materials for Electronics and Energy Technology (i-MEET)
Christian Kupfer
Institute Materials for Electronics and Energy Technology (i-MEET)
Elena Mack
Lehrstuhl für Physikalische Chemie I
Patrick Duchstein
Department Chemie und Pharmazie
Katharina Dehm
Lehrstuhl für Chemistry of thin film materials
Stevie Furxhiu
Professur für Physikalische Chemie
Achim Zahl
Lehrstuhl für Chemistry of thin film materials
Tobias Stubhan
Institute Materials for Electronics and Energy Technology (i-MEET)
Zijian Peng
Institute Materials for Electronics and Energy Technology (i-MEET)
Olaf Brummel
Lehrstuhl für Katalytische Grenzflächenforschung
Ryan Crisp
Lehrstuhl für Chemistry of thin film materials
Dirk Zahn
Professur für Theoretische Chemie
Carolin Müller
Juniorprofessur für die Theorie elektronisch angeregter Zustände
Dirk Michael Guldi
Lehrstuhl für Physikalische Chemie I
Marcus Bär
Professur für Röntgenspektroskopie (HIERN)
Dorothea Wisser
Professur für Katalyse
Jörg Libuda
Lehrstuhl für Katalytische Grenzflächenforschung
Christoph Brabec
Institute Materials for Electronics and Energy Technology (i-MEET)
Julien Bachmann
Lehrstuhl für Chemistry of thin film materials
Involved external institutions
Germany (DE)How to cite
APA:
Koch, V., Zeng, X., Deckert, A., Büttner, P., Franz, E., Ding, F.,... Bachmann, J. (2025). Solution ALD of (CH3NH3)(PbI3) Perovskite Thin Films Yields Functional Quality and Stability Superior to Classical Processing. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.202513903
MLA:
Koch, Vanessa, et al. "Solution ALD of (CH3NH3)(PbI3) Perovskite Thin Films Yields Functional Quality and Stability Superior to Classical Processing." Angewandte Chemie International Edition (2025).
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