Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes

Ultsch S, Dick J, Schwarz J, Schulze J (2025)

Publication Language: English

Publication Type: Conference contribution

Publication year: 2025

Publisher: Institute of Electrical and Electronics Engineers Inc.

Series: Proceedings of the International Convention MIPRO

Pages Range: 1685-1690

Conference Proceedings Title: 2025 MIPRO 48th ICT and Electronics Convention

Event location: Opatija HR

ISBN: 979-8-3315-3598-8

DOI: 10.1109/MIPRO65660.2025.11132079

Abstract

In this work, electroluminescence in pnjunctions with various geometries in 4H-SiC is investigated. Under forward bias, all devices exhibit the nitrogen donor to valence band transition, emitting light at wavelengths of 391 nm and 400 nm. Additionally, light with a peak wavelength of 476 nm is emitted, corresponding to the nitrogen donor to D1 defect transition. Devices with significant areas of aluminum and nitrogen co-doping in their pnjunctions, feature another peak at 496 nm, resulting from the transition between the nitrogen donor state and the Al2 acceptor state, located deep within the bandgap. The peaks of the latter transition display a blue shift due to the Stark effect. At elevated device temperatures a red shift of all peaks is observed due to self-heating. The spectra obtained from the wafer s backside are compared with the absorption characteristics of the substrate, revealing that light stemming from the nitrogen donor to D1 defect transition is absorbed dominantly by the substrate.

Authors with CRIS profile

Jan Dick Lehrstuhl für Elektronische Bauelemente Julian Schwarz Lehrstuhl für Elektronische Bauelemente Jörg Schulze Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Ultsch, S., Dick, J., Schwarz, J., & Schulze, J. (2025). Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes. In Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Eds.), 2025 MIPRO 48th ICT and Electronics Convention (pp. 1685-1690). Opatija, HR: Institute of Electrical and Electronics Engineers Inc..

MLA:

Ultsch, S., et al. "Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes." Proceedings of the 48th MIPRO ICT and Electronics Convention, MIPRO 2025, Opatija Ed. Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak, Institute of Electrical and Electronics Engineers Inc., 2025. 1685-1690.

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