Monolithic 4 H - SiC nanomechanical resonators with high intrinsic quality factors
Hochreiter A, Bredol P, David F, Demiralp B, Weber HB, Weig EM (2025)
Publication Type: Journal article
Publication year: 2025
Journal
Book Volume: 24
Article Number: 034005
Issue: 3
DOI: 10.1103/vclj-v8qx
Abstract
We present an extensive study of 4H-SiC nanomechanical resonators electrochemically etched out of a monocrystalline wafer. Combining piezo-driven interferometric determination of the mechanical spectra with scanning laser Doppler vibrometry, an unambiguous assignment of resonance peaks to flexural and torsional modes is achieved. The investigation of multiple harmonic eigenmodes of singly and doubly clamped resonators with varying geometry allows for a comprehensive characterization. Excellent intrinsic mechanical quality factors up to 2 ×105 are found at room temperature, approaching the thermoelastic limit at eigenfrequencies exceeding 10 MHz. Mechanical stress is essentially absent. Young’s modulus is in agreement with the literature. These findings are robust under postprocessing treatments, in particular atomic layer etching and high-temperature thermal annealing. The resulting on-chip high-quality mechanical resonators represent a valuable technological element for a broad range of applications. In particular, the monolithic architecture meets the requirements of spin-based photonic quantum technologies on the upcoming SiC platform.
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Germany (DE)How to cite
APA:
Hochreiter, A., Bredol, P., David, F., Demiralp, B., Weber, H.B., & Weig, E.M. (2025). Monolithic 4 <i>H</i> - SiC nanomechanical resonators with high intrinsic quality factors. Physical Review Applied, 24. https://doi.org/10.1103/vclj-v8qx
MLA:
Hochreiter, André, et al. "Monolithic 4 <i>H</i> - SiC nanomechanical resonators with high intrinsic quality factors." Physical Review Applied 24 (2025).
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