Modeling of the Dynamic On-State Resistance of GaN-HEMTs

Kohlhepp B, Breidenstein D, Pawellek A, Dürbaum T, Dieckerhoff S (2025)

Publication Type: Conference contribution

Publication year: 2025

Publisher: Mesago PCIM GmbH

Pages Range: 1587-1596

Conference Proceedings Title: PCIM Europe Conference Proceedings

Event location: Nuremberg, DEU

ISBN: 9783800765416

DOI: 10.30420/566541208

Abstract

Unfortunately, in real switching operation, GaN-HEMTs often do not achieve the promising datasheet values in terms of on-state resistance, as charge trapping effects lead to so-called dynamic on-state resistance. Several dependencies of the on-state resistance, such as the blocking voltage, switched current, switching frequency, duty cycle, and device temperature, as well as type of switching transition (hard or soft switching), make reliable loss predictions difficult. In order to accurately predict conduction losses of GaN-HEMTs in real applications, this paper proposes a modeling approach based on measured data. The study incorporates the blocking voltage, switched current, temperature, switching frequency, and duty cycle. The final model exemplarily derived for hard switching operation is based on the resistance values gained by steady-state operation of the converter and consists simply of linear dependencies on the operating point. It incorporates a positive temperature coefficient and a negative coefficient regarding the switched current.

Authors with CRIS profile

Daniel Breidenstein Lehrstuhl für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

Involved external institutions

Technische Universität Berlin DE Germany (DE) Hochschule für angewandte Wissenschaften Würzburg-Schweinfurt DE Germany (DE)

How to cite

APA:

Kohlhepp, B., Breidenstein, D., Pawellek, A., Dürbaum, T., & Dieckerhoff, S. (2025). Modeling of the Dynamic On-State Resistance of GaN-HEMTs. In PCIM Europe Conference Proceedings (pp. 1587-1596). Nuremberg, DEU: Mesago PCIM GmbH.

MLA:

Kohlhepp, Benedikt, et al. "Modeling of the Dynamic On-State Resistance of GaN-HEMTs." Proceedings of the 2025 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025, Nuremberg, DEU Mesago PCIM GmbH, 2025. 1587-1596.

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