Tas D, Scheller K, Hagelauer A, Dietz M, Weigel R (2025)
Publication Language: English
Publication Type: Conference contribution
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 199-202
Conference Proceedings Title: 2025 16th German Microwave Conference (GeMiC)
ISBN: 979-8-3315-2179-0
DOI: 10.23919/GeMiC64734.2025.10979149
In this work, a 3-stage power amplifier (PA) is implemented on an electronic photonic integrated circuit (EPIC) semiconductor technology. While silicon photonics are being found extensive usage in communication data center applications, there is a lack of research on their performance in wireless communication, radar, and sensing applications. This work describes the development and the evaluation of a power amplifier using IHP SiGe 250 nm BiCMOS EPIC technology. 5.5 dBm saturated output power was measured while the maximum power gain is 24.9 dB at 122.3 GHz and the 3 dB gain bandwidth is between 114 GHz to 134 GHz which is sufficient to cover ISM Band applications. The power amplifier consumes 157 mW and occupies 800 μm × 300 μm core area and the total chip area is 1250 μm × 580 μm.
APA:
Tas, D., Scheller, K., Hagelauer, A., Dietz, M., & Weigel, R. (2025). A Power Amplifier for Electronic Photonic Integrated D-Band Radar Applications. In 2025 16th German Microwave Conference (GeMiC) (pp. 199-202). Dresden, DE: Institute of Electrical and Electronics Engineers Inc..
MLA:
Tas, Deniz, et al. "A Power Amplifier for Electronic Photonic Integrated D-Band Radar Applications." Proceedings of the 16th German Microwave Conference, GeMiC 2025, Dresden Institute of Electrical and Electronics Engineers Inc., 2025. 199-202.
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