Direct-patterning SnO2 deposition by atomic-layer additive manufacturing

Kürten S, Hashemizadeh K, Wu M, Will J, Kundrata I, Spiecker E, Bachmann J (2025)

Publication Type: Journal article

Publication year: 2025

Journal

DOI: 10.1039/d5ma00182j

Abstract

The ALD precursor tetrakis(dimethylamido)tin and water are exploited towards the atomic-layer additive manufacturing (ALAM) of SnO2 lines. ALAM exploits the surface chemistry principles of ALD (atomic layer depositions) but adds a laterally constrained precursor delivery. Motion of the precursor delivery nozzle over the substrate surface thus deposits the material in a 3D printing mode while maintaining the sub-nanometers thickness control of ALD. We find that the precursor canister temperature can be lowered by approximately 20 °C from ALD to ALAM, corresponding to a lower precursor consumption. The temperature window of controlled deposition reaches from 150 °C to 250 °C, whereas 200 °C yields the best stoichiometry and highest growth rate. The material is amorphous initially and crystallizes upon annealing at 500 °C in N2 or air. The lines deposited have a flat top profile and a constant thickness along their length.

Authors with CRIS profile

Involved external institutions

ATLANT 3D Nanosystems Denmark (DK)

How to cite

APA:

Kürten, S., Hashemizadeh, K., Wu, M., Will, J., Kundrata, I., Spiecker, E., & Bachmann, J. (2025). Direct-patterning SnO2 deposition by atomic-layer additive manufacturing. Materials Advances. https://doi.org/10.1039/d5ma00182j

MLA:

Kürten, Sonja, et al. "Direct-patterning SnO2 deposition by atomic-layer additive manufacturing." Materials Advances (2025).

BibTeX: Download