Touijer O, Wiedemann JPW, Loose M, Irnstorfer F, Fischer G (2025)
Publication Type: Conference contribution, Original article
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 86-89
Conference Proceedings Title: 2025 IEEE MTT-S Latin America Microwave Conference, LAMC 2025 - Proceedings
Event location: San Juan, PR, USA
ISBN: 9798331540401
DOI: 10.1109/LAMC63321.2025.10880546
Gallium Nitride (GaN) transistors have established themselves as a powerful alternative to Si-based Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) transistors, particularly in high-frequency amplifiers. In this work, the use of GaN transistors in class F amplifiers at a frequency of 123.2 MHz and an output power of 100 W is investigated. The focus is on the optimization of the target impedances considering intrinsic and extrinsic parameters. A multiharmonics tuner was used to precisely adjust the impedances and contributed to the increase in performance. The results show that the amplifier achieves a maximum Power-Added Efficiency (PAE) of approximately 73.5 % with a compression of 3 dB. This work confirms the advantages of GaN transistors in high power applications and provides important insights for the further development of modern amplifier technologies in the VHF range.
APA:
Touijer, O., Wiedemann, J.P.W., Loose, M., Irnstorfer, F., & Fischer, G. (2025). GaN Technology as the Key to Efficient Solutions for High-Performance Class F Power Amplifier. In Roberto S. Murphy (Eds.), 2025 IEEE MTT-S Latin America Microwave Conference, LAMC 2025 - Proceedings (pp. 86-89). San Juan, PR, USA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Touijer, Ouadie, et al. "GaN Technology as the Key to Efficient Solutions for High-Performance Class F Power Amplifier." Proceedings of the 5th IEEE MTT-S Latin America Microwave Conference, LAMC 2025, San Juan, PR, USA Ed. Roberto S. Murphy, Institute of Electrical and Electronics Engineers Inc., 2025. 86-89.
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