Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
Jones AR, Cheng X, Parthasarathy SK, Nagy R, Salter P, Smith J, Bonato C, Bekker C (2025)
Publication Status: Submitted
Publication Type: Unpublished / Preprint
Future Publication Type: Journal article
Publication year: 2025
Publisher: arXiv
DOI: 10.48550/arXiv.2502.15533
Abstract
Optically active silicon-vacancy (VSi) centers in silicon carbide (SiC) serve as qubits, interfacing spins via photons. This capability allows the encoding of photonic information within the spin state and facilitates on-demand readout, promising applications such as quantum memories. However, electron irradiation, a common technique for creating defects in SiC, lacks spatial selectivity, limiting scalability. We employed femtosecond laser writing within photonic structures to generate single (VSi) centers, registering them to photonic structures and enhancing optical collection efficiency by a factor of 4.5. Characterization of 28 laser-written defects centers in solid immersion lenses (SILs) showed distributions relative to the photonic structure's center of 260 nm in the x-direction and 60 nm in the y-direction, with standard deviations of ±170 nm and ±90 nm, respectively. This method is scalable for developing integrated quantum devices using spin-photon interfaces in SiC.
Authors with CRIS profile
Shravan Kumar Parthasarathy
Lehrstuhl für Angewandte Quantentechnologien
Roland Nagy
Lehrstuhl für Angewandte Quantentechnologien
Involved external institutions
United Kingdom (GB)How to cite
APA:
Jones, A.R., Cheng, X., Parthasarathy, S.K., Nagy, R., Salter, P., Smith, J.,... Bekker, C. (2025). Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing. (Unpublished, Submitted).
MLA:
Jones, Alexander R., et al. Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing. Unpublished, Submitted. 2025.
BibTeX: Download