A 21 GHz Bandwidth 30 dB Gain VGA for 6G Basband Systems in 22 nm FDSOI

Hetterle P, Engelmann A, Scheller K, Huang T, Weigel R, Franchi N (2025)

Publication Status: Submitted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2025

Publisher: IEEE

Event location: Dresden DE

ISBN: 978-3-9820397-4-9

URI: https://ieeexplore.ieee.org/document/10979017

DOI: 10.23919/GeMiC64734.2025.10979017

Abstract

This paper presents a 5-stage wideband variable gain amplifier (VGA) integrated in 22 nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The circuit comprises three different core circuit topologies, composed by an input buffer, three gain control stages and a high-power ouput stage. The VGA achieves 30 dB gain with a power consumption of 44 mW, exhibiting a continuous tuning range of 33 dB, covering a 3 dB bandwidth of 21 GHz, while occupying a area of 0.077 mm2. The VGA is optimized for operation within high-data rate 6G receiver systems.

Authors with CRIS profile

Philip Hetterle Lehrstuhl für Intelligente Technische Elektronik und Systeme Andre Engelmann Lehrstuhl für Intelligente Technische Elektronik und Systeme Kai Scheller Lehrstuhl für Intelligente Technische Elektronik und Systeme Tianzhu Huang Lehrstuhl für Intelligente Technische Elektronik und Systeme Robert Weigel Technische Fakultät Norman Franchi Lehrstuhl für Intelligente Technische Elektronik und Systeme

How to cite

APA:

Hetterle, P., Engelmann, A., Scheller, K., Huang, T., Weigel, R., & Franchi, N. (2025). A 21 GHz Bandwidth 30 dB Gain VGA for 6G Basband Systems in 22 nm FDSOI. In Proceedings of the German Microwave Conference (GEMIC). Dresden, DE: IEEE.

MLA:

Hetterle, Philip, et al. "A 21 GHz Bandwidth 30 dB Gain VGA for 6G Basband Systems in 22 nm FDSOI." Proceedings of the German Microwave Conference (GEMIC), Dresden IEEE, 2025.

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