A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI

Scheller K, Engelmann A, Probst F, Flohr M, Weigel R, Schrotz AM, Fischer G (2024)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2024

Publisher: IEEE

Event location: Bali ID

ISBN: 979-8-3503-6354-8

URI: https://ieeexplore.ieee.org/document/10867723

DOI: 10.1109/APMC60911.2024.10867723

Abstract

This paper presents a compact, low DC-power four-stage G-Band power amplifier (PA) integrated into a 22 nm fully-depleted silicon-on-insulator (FDSOI) technology. The three common-source driver stages and the output stage utilize the capacitive neutralization technique for gain-boosting. The output stage is implemented as a tuned stacked-FET amplifier for further gain and output power enhancement. Low-loss stacked transformers are employed as matching networks to achieve a small core-area footprint of 0.024 mm2. The PA attains a gain of 12.5 dB, a 1 dB output compression point OP1dB of -4 dBm, and an extrapolated saturated output power Psat of 3.7 dB at 200 GHz, based on simulation and measurement. Supplied by 1.6 and 0.85 V, the circuit´s DC-power consumption is below 57 mW.

Authors with CRIS profile

Kai Scheller Lehrstuhl für Intelligente Technische Elektronik und Systeme Andre Engelmann Lehrstuhl für Intelligente Technische Elektronik und Systeme Florian Probst Lehrstuhl für Technische Elektronik (LTE) Michael Flohr Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Technische Fakultät Albert-Marcel Schrotz Lehrstuhl für Intelligente Technische Elektronik und Systeme Georg Fischer Professur für Technische Elektronik

Related research project(s)

Terahertz Digital Chess-Board-Modulated Spread-Spectrum System for Radar and Communication Comprising 200 GHz Bandwidth Integrierte Terahertz-Systeme mit neuartiger Funktionalität (INTEREST) Jan. 1, 2022 - Jan. 1, 2025

How to cite

APA:

Scheller, K., Engelmann, A., Probst, F., Flohr, M., Weigel, R., Schrotz, A.-M., & Fischer, G. (2024). A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI. In Proceedings of the 2024 Asia-Pacific Microwave Conference. Bali, ID: IEEE.

MLA:

Scheller, Kai, et al. "A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI." Proceedings of the 2024 Asia-Pacific Microwave Conference, Bali IEEE, 2024.

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