Simulation of optical gain in AlGaN quantum wells
Kolle S, Römer F, Cardinali G, Schultz A, Susilo N, Vidal DH, Wernicke T, Kneissl M, Witzigmann B (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: IEEE Computer Society
Book Volume: 2023-September
Pages Range: 77-78
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Turin
ISBN: 9798350314298
DOI: 10.1109/NUSOD59562.2023.10273539
Abstract
Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Kolle, S., Römer, F., Cardinali, G., Schultz, A., Susilo, N., Vidal, D.H.,... Witzigmann, B. (2023). Simulation of optical gain in AlGaN quantum wells. In Paolo Bardella, Alberto Tibaldi (Eds.), Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 77-78). Turin, IT: IEEE Computer Society.
MLA:
Kolle, S., et al. "Simulation of optical gain in AlGaN quantum wells." Proceedings of the 23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023, Turin Ed. Paolo Bardella, Alberto Tibaldi, IEEE Computer Society, 2023. 77-78.
BibTeX: Download