Transient Measurement Setup for the Output Characteristics with Focus on the Ohmic Region for Si-MOSFETs and GaN-HEMTs

Rösel S, Breidenstein D, Dürbaum T


Publication Type: Conference contribution, Conference Contribution

Conference Proceedings Title: PELSS 2024; Power Electronics Student Summit

Event location: Kassel DE

ISBN: 978-3-8007-6431-0

Abstract

A method of measuring the output characteristics of Si-MOSFETs and GaN-HEMTs is described. In order to precisely predict the conduction losses of a semiconductor in a switched mode power supply, an exact description of the ohmic region of the output characteristics is necessary beyond the data published by the manufacturer. The paper describes the proposed method in detail. Experimental results show a good agreement of the idea presented in this paper with the data sheet. Furthermore, application-relevant aspects, like temperature, can be measured with the setup, leading to an accurate prediction of the conduction losses. Measurement results are shown for a conventional Si- MOSFET as well as a low-voltage GaN-HEMT.

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How to cite

APA:

Rösel, S., Breidenstein, D., & Dürbaum, T. (2024). Transient Measurement Setup for the Output Characteristics with Focus on the Ohmic Region for Si-MOSFETs and GaN-HEMTs. In VDE (Eds.), PELSS 2024; Power Electronics Student Summit. Kassel, DE.

MLA:

Rösel, Sophia, Daniel Breidenstein, and Thomas Dürbaum. "Transient Measurement Setup for the Output Characteristics with Focus on the Ohmic Region for Si-MOSFETs and GaN-HEMTs." Proceedings of the PELSS 2024; Power Electronics Student Summit, Kassel Ed. VDE, 2024.

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