Ge-on-Si single-photon avalanche diode using a double mesa structure
Wanitzek M, Schulze J, Oehme M (2024)
Publication Type: Journal article
Publication year: 2024
Journal
Book Volume: 49
Pages Range: 6345-6348
Journal Issue: 22
DOI: 10.1364/OL.534436
Abstract
We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures. Operated in the Geiger-mode at 110 K, the dark count rate in the double mesa is 100 times smaller. The devices achieve a dark count rate of 953 kHz, a single-photon detection efficiency of 7.3%, and a record-low jitter of 81 ps at an excess bias of 17.6% and a temperature of 110 K.
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Germany (DE)How to cite
APA:
Wanitzek, M., Schulze, J., & Oehme, M. (2024). Ge-on-Si single-photon avalanche diode using a double mesa structure. Optics Letters, 49(22), 6345-6348. https://doi.org/10.1364/OL.534436
MLA:
Wanitzek, Maurice, Jörg Schulze, and Michael Oehme. "Ge-on-Si single-photon avalanche diode using a double mesa structure." Optics Letters 49.22 (2024): 6345-6348.
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