Volumetric vertical Hall element with integrated coil
Hohnloser D, Schmidt C, Spitzlsperger G, Weigel R (2024)
Publication Language: English
Publication Type: Journal article
Publication year: 2024
Journal
Book Volume: 375
Article Number: 115516
DOI: 10.1016/j.sna.2024.115516
Abstract
Most integrated Hall elements are isolated against other parts of an integrated circuit by a pn junction. This article presents a Hall element which is entirely enclosed by a dielectric boundary and therewith electrically isolated. The used technology is a standard CMOS process which includes processing steps of the wafer backside. Experiments with the Hall element show an absolute sensitivity of 48 mV T-1. The Hall element is surrounded by an integrated coil for test capabilities without external coil. This coil has a resistance of 19 Ω and an effectiveness of 96 mT A-1.
Authors with CRIS profile
Daniel Hohnloser
Lehrstuhl für Technische Elektronik (LTE)
Robert Weigel
Lehrstuhl für Technische Elektronik (LTE)
Involved external institutions
Italy (IT)How to cite
APA:
Hohnloser, D., Schmidt, C., Spitzlsperger, G., & Weigel, R. (2024). Volumetric vertical Hall element with integrated coil. Sensors and Actuators A-Physical, 375. https://doi.org/10.1016/j.sna.2024.115516
MLA:
Hohnloser, Daniel, et al. "Volumetric vertical Hall element with integrated coil." Sensors and Actuators A-Physical 375 (2024).
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