Hopfner J, Kuhl F, Schilling M, Muhin A, Guttmann M, Hofmann G, Römer F, Wernicke T, Witzigmann B, Kneissl M (2024)
Publication Type: Journal article
Publication year: 2024
Book Volume: 125
Article Number: 071109
Journal Issue: 7
DOI: 10.1063/5.0223284
The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent electroluminescence measurements on dual wavelength AlGaN multiple quantum well (MQW) LEDs show a strong shift in the spectral power distribution from 250 to 233 nm with decreasing temperature. Comparing experimental data with simulation shows that the hole mobility and the electron to hole mobility ratios have a significant influence on the carrier injection efficiency (CIE) and that the change in the spectral power distribution is originating from a change in the hole distribution in the MQWs. Poor hole injection and charge carrier confinement in the AlGaN MQW active region was identified as one of the main reasons for the low CIE in far-UVC LEDs.
APA:
Hopfner, J., Kuhl, F., Schilling, M., Muhin, A., Guttmann, M., Hofmann, G.,... Kneissl, M. (2024). Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements. Applied Physics Letters, 125(7). https://doi.org/10.1063/5.0223284
MLA:
Hopfner, Jakob, et al. "Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements." Applied Physics Letters 125.7 (2024).
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