A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology
Breun S, Schrotz AM, Koch M, Issakov V, Weigel R (2024)
Publication Type: Conference contribution
Publication year: 2024
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024
Event location: Clearwater, FL
ISBN: 9798350344943
DOI: 10.1109/WAMICON60123.2024.10522867
Abstract
This paper presents a fully integrated, continuously tunable 290-359 GHz high output power signal source achieving 1.7dBm peak output power (Pmax) at 320 GHz. A continuous frequency tuning range of 69 GHz (21.3 %) is achieved by tuning both, the capacitance and effective inductance of a push-push Colpitts voltage-controlled oscillator (VCO) at around 160 GHz and subsequent frequency multiplication by a factor of 2. A phase noise of -74 dBc/Hz/-98 dBc/Hz at 1MHz/10MHz offset from the carrier, as well as a power variation below 5.6 dB is achieved. The prototype is fabricated using an advanced 90nm SiGe BiCMOS technology with target ft/fmax of 300GHz/500GHz and consumes around 457mW. This corresponds to a DC-to-RF efficiency of 0.33% and FoMT of -170 dBc/Hz, which is very competitive among fully integrated signal sources, considering the high output power and tuning range.
Authors with CRIS profile
Sascha Breun
Lehrstuhl für Technische Elektronik (LTE)
Albert-Marcel Schrotz
Lehrstuhl für Technische Elektronik (LTE)
Manuel Koch
Lehrstuhl für Technische Elektronik (LTE)
Robert Weigel
Lehrstuhl für Technische Elektronik (LTE)
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Breun, S., Schrotz, A.-M., Koch, M., Issakov, V., & Weigel, R. (2024). A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology. In 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024. Clearwater, FL, US: Institute of Electrical and Electronics Engineers Inc..
MLA:
Breun, Sascha, et al. "A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology." Proceedings of the 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024, Clearwater, FL Institute of Electrical and Electronics Engineers Inc., 2024.
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