Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin-Film Solar Cell Stacks

Bombsch J, Kodalle T, Garcia-Diez R, Hartmann C, Félix R, Ueda S, Wilks RG, Kaufmann CA, Bär M (2024)


Publication Type: Journal article

Publication year: 2024

Journal

DOI: 10.1002/adfm.202403685

Abstract

Performance-enhancing heavy alkali-based post-deposition treatments (PDT) of Cu(In,Ga)Se2 (CIGSe) thin-film solar cells absorbers often induce the formation of a Rb- In-Se phase on the CIGSe absorber. Co-evaporation of an interfacial RbInSe2 (RISe) layer between buffer and absorber can also benefit cell performance. A detailed analysis of the chemical interface structures in CdS/RISe/CIGSe layer stacks is performed using hard X-ray photoelectron spectroscopy (HAXPES). For comparison, stacks without RISe and based on RbF PDT CIGSe absorbers are also studied. When aiming for the direct co-evaporation of a RISe layer on the CIGSe absorber, the formation of an additional In-Se phase is found. For the RbF PDT CIGSe absorbers, the study only finds small amounts of Rb and no indication for a RISe layer formation. Examining layer stacks prepared via additional chemical bath deposition (CBD) of CdS reveals a clear impact of the presence of Rb (or of Rb-containing species) on the CIGSe surface. In these cases, an increase of the induction/coalescence period is found at the beginning of the CBD buffer layer growth process and the formation of Cd─Se bonds; thereafter, a more compact CdS layer growth is observed.

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APA:

Bombsch, J., Kodalle, T., Garcia-Diez, R., Hartmann, C., Félix, R., Ueda, S.,... Bär, M. (2024). Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin-Film Solar Cell Stacks. Advanced Functional Materials. https://doi.org/10.1002/adfm.202403685

MLA:

Bombsch, Jakob, et al. "Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin-Film Solar Cell Stacks." Advanced Functional Materials (2024).

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