High-mobility field-effect transistors based on transition metal dichalcogenides

Podzorov V, Gershenson ME, Kloc C, Zeis R, Bucher E (2004)

Publication Language: English

Publication Type: Journal article

Publication year: 2004

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 84

Pages Range: 3301-3303

Journal Issue: 17

DOI: 10.1063/1.1723695

Abstract

Field-effect transistors (FET) based on transition metal dichalcogenides (TMD) were fabricated. The fabrication of the FET with intrinsically low field-effect threshold and high charge carrier mobility was possible due to the unique structure of single crystals of these layered inorganic semiconductors. Ambipolar operation is demonstrated by the FETs. The combination of the electrical properties and mechanical flexibility make the TBD based field-effect transistors an attractive option for flexible electronics.

Authors with CRIS profile

Roswitha Zeis

Involved external institutions

Rutgers, The State University of New Jersey US United States (USA) (US) Lucent Technologies US United States (USA) (US)

How to cite

APA:

Podzorov, V., Gershenson, M.E., Kloc, C., Zeis, R., & Bucher, E. (2004). High-mobility field-effect transistors based on transition metal dichalcogenides. Applied Physics Letters, 84(17), 3301-3303. https://doi.org/10.1063/1.1723695

MLA:

Podzorov, V., et al. "High-mobility field-effect transistors based on transition metal dichalcogenides." Applied Physics Letters 84.17 (2004): 3301-3303.

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