A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication

Huang T, Engelmann A, Hetterle P, Probst F, Weigel R (2023)


Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2023

Event location: Taipei TW

DOI: 10.1109/APMC57107.2023.10439861

Abstract

This paper proposes a high-linearity 3-stacked D-band power amplifier (PA) for 6G communication. The PA is fabricated in 22 nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology and consists of four stages, including three driver stages. The capacitive neutralization approach is adopted in all stages for gain-boosting. Transistor stacking is applied in the output stage for high output power and linearity. The circuit achieves a peak power gain of 23.8 dB at 135 GHz with a 3-dB bandwidth of 16 GHz. A maximum measured output power of 13 dBm, an output referred 1-dB compression point OP1dB of 10.2 dBm, and a peak power-added efficiency (PAE) of 9.9% are attained, while occupying only 0.081 mm² of chip area.

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APA:

Huang, T., Engelmann, A., Hetterle, P., Probst, F., & Weigel, R. (2023). A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication. In Proceedings of the 2023 Asia-Pacific Microwave Conference. Taipei, TW.

MLA:

Huang, Tianzhu, et al. "A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication." Proceedings of the 2023 Asia-Pacific Microwave Conference, Taipei 2023.

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