Room-temperature Sputtered Ultralow-loss Silicon Nitride
Zhang S, Bi T, Harder I, Lohse O, Gannott F, Gumann A, Zhang Y, Del'Haye P (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
Event location: Munich, DEU
ISBN: 9798350345995
DOI: 10.1109/CLEO/EUROPE-EQEC57999.2023.10232644
Abstract
Silicon nitride films with the best optical quality can be realized with low pressure chemical vapor deposition (LPCVD) [1]. However, high mechanical stress within the LPCVD silicon nitride films leads to formation of cracks and prevents thick films (> 400 nm) with high optical quality. A number of clever processes have been developed in order to prevent cracks, such as patterning of crack barriers, multi-step deposition and a Damascene process that deposits silicon nitride into trenches. In addition, to reduce material losses and achieve ultralow propagation losses (~1 dB/m), long-time high temperature annealing (1200 °C for 3 hours) is needed, which can cause dopant diffusion and damage of prefabricated temperature-sensitive devices. Hence, LPCVD Si3N4 is very challenging for applications in back-end-of-line processes and foundry compatible processes. In recent years, low-temperature deposited Si3N4 thin films have attracted increasing interest for 3D hybrid integration of Si3N4 with other materials. Here we report the fabrication of ultralow-loss Si3N4 photonics film by reactive sputtering at room temperature [2]. Directly after room-temperature sputtering, the Si3N4 film loss is 32 dB/m without thermal annealing and the intrinsic optical quality factor (Q) of the fabricated microresonators is 1.1 million in the L-band. This propagation loss is already lower than that of annealing-free LPCVD Si3N4 film deposited at 780 °C [3].
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Zhang, S., Bi, T., Harder, I., Lohse, O., Gannott, F., Gumann, A.,... Del'Haye, P. (2023). Room-temperature Sputtered Ultralow-loss Silicon Nitride. In 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023. Munich, DEU: Institute of Electrical and Electronics Engineers Inc..
MLA:
Zhang, Shuangyou, et al. "Room-temperature Sputtered Ultralow-loss Silicon Nitride." Proceedings of the 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023, Munich, DEU Institute of Electrical and Electronics Engineers Inc., 2023.
BibTeX: Download