AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance

Kong M, Osvet A, Barabash A, Zhang K, Hu H, Elia J, Erban C, Yokosawa T, Spiecker E, Batentschuk M, Brabec C (2023)

Publication Type: Journal article, Original article

Publication year: 2023

Journal

ACS Applied Materials and Interfaces American Chemical Society

Authors with CRIS profile

Mengqin Kong Technische Fakultät Andres Osvet Institute Materials for Electronics and Energy Technology (i-MEET) Anastasiia Barabash Institute Materials for Electronics and Energy Technology (i-MEET) Kaicheng Zhang Institute Materials for Electronics and Energy Technology (i-MEET) Huiying Hu Institute Materials for Electronics and Energy Technology (i-MEET) Jack Elia Institute Materials for Electronics and Energy Technology (i-MEET) Tadahiro Yokosawa Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Erdmann Spiecker
Miroslaw Batentschuk Institute Materials for Electronics and Energy Technology (i-MEET) Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET)

Involved external institutions

SUNOVATION Produktion GmbH

Germany (DE)

How to cite

APA:

Kong, M., Osvet, A., Barabash, A., Zhang, K., Hu, H., Elia, J.,... Brabec, C. (2023). AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance. ACS Applied Materials and Interfaces. https://doi.org/10.1021/acsami.3c11140

MLA:

Kong, Mengqin, et al. "AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance." ACS Applied Materials and Interfaces (2023).

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