Influence of gate to emitter voltage on the IGBT fault current interruption capabilities in a hybrid DC breaker

Ali W, Bissal A, März M (2023)

Publication Type: Conference contribution

Publication year: 2023

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 1201-1206

Conference Proceedings Title: ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia: Green World with Power Electronics

Event location: Jeju KR

ISBN: 9788957083505

DOI: 10.23919/ICPE2023-ECCEAsia54778.2023.10213804

Abstract

Low voltage direct current (DC) systems are playing a pivotal role in the transformation of the grid especially to accommodate for increasing power demands. One of the key enabling technologies is an ultra-fast DC breaker. Although some research has been done on DC breakers, they are relatively large and expensive devices especially due to the semiconductor branch. In this paper, an insulated gate bipolar transistor (IGBT) in a TO-264 package was driven to its limit to study its fault current interruption capability at very high currents. A programmable flyback converter was designed and built to test the turn-off capability of the IGBT at different gate voltages and currents. It has been shown that increasing the gate voltage from 15 V to 30 V, and minimizing stray inductances, a single IGBT can conduct and turn-off currents as large as 1300 A , i.e., 12 times the rated value, thereby significantly reducing the hybrid DC breaker size and cost.

Authors with CRIS profile

Waqas Ali Lehrstuhl für Leistungselektronik Martin März Lehrstuhl für Leistungselektronik

Involved external institutions

HUAWEI TECHNOLOGIES Deutschland GmbH DE Germany (DE)

How to cite

APA:

Ali, W., Bissal, A., & März, M. (2023). Influence of gate to emitter voltage on the IGBT fault current interruption capabilities in a hybrid DC breaker. In ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia: Green World with Power Electronics (pp. 1201-1206). Jeju, KR: Institute of Electrical and Electronics Engineers Inc..

MLA:

Ali, Waqas, Ara Bissal, and Martin März. "Influence of gate to emitter voltage on the IGBT fault current interruption capabilities in a hybrid DC breaker." Proceedings of the 11th International Conference on Power Electronics - ECCE Asia, ICPE 2023-ECCE Asia, Jeju Institute of Electrical and Electronics Engineers Inc., 2023. 1201-1206.

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