Ultrathin parasitic SiOzlayer formation at annealed wet-chemical NiOx/Si interfaces in Perovskite/Si tandem solar cells
Lange S, Fett B, Hähnel A, Müller A, Kabakli ÖS, Newcomb-Hall Z, Herbig B, Schulze PS, Naumann V, Sextl G, Mandel K, Hagendorf C (2023)
Publication Type: Conference contribution
Publication year: 2023
Journal
Publisher: American Institute of Physics Inc.
Book Volume: 2826
Conference Proceedings Title: AIP Conference Proceedings
Event location: Hybrid, Konstanz, DEU
ISBN: 9780735445369
DOI: 10.1063/5.0141803
Abstract
NiOx is a promising hole-transport layer for perovskite/Si tandem solar cells due to its high work function and long-term bulk stability. Besides that, it should also be inert to reactions with materials in its proximity. NiOx will be interfaced to Si using a TOPCon bottom cell and the question about the chemical stability of this interface arises. In this contribution, we investigate the effect of air-annealing between 200 °C and 600 °C on the microstructural, electronical,chemical and electrical properties of the wet-chemical NiOx/Si interface with X-ray photoelectron spectroscopy (XPS), electron-energy loss spectroscopy in a scanning transmission electron microscope (STEM-EELS) and micro transfer length measurements (µ-TLM). A mixed bulk phase consisting of NiOxHy after annealing at 200 °C is found, which is converted to pure NiOx above 300 °C. The Fermi energy shifts correspondingly towards the NiOx valence band, indicating suitable p-selective properties. A nm-thin parasitic SiOz layer at the NiOx/Si junction is confirmed after an annealing step as low as 300 °C, reaching a thickness of 3-4 nm after annealing at 500 °C. This interfacial layer acts as a barrier for electrical current transport, greatly increases the contact resistivity and may hinder tandem integration.
Involved external institutions
Fraunhofer-Center für Silizium-Photovoltaik (CSP)
Germany (DE)
Fraunhofer-Institut für Biomedizinische Technik (IBMT) / Fraunhofer Institute for Biomedical Engineering
Germany (DE)
Fraunhofer-Institut für Solare Energiesysteme (ISE) / Fraunhofer Institute for Solar Energy Systems
Germany (DE)
Germany (DE)
Fraunhofer-Institut für Biomedizinische Technik (IBMT) / Fraunhofer Institute for Biomedical Engineering
Germany (DE)
Fraunhofer-Institut für Solare Energiesysteme (ISE) / Fraunhofer Institute for Solar Energy Systems
Germany (DE)
How to cite
APA:
Lange, S., Fett, B., Hähnel, A., Müller, A., Kabakli, Ö.S., Newcomb-Hall, Z.,... Hagendorf, C. (2023). Ultrathin parasitic SiOzlayer formation at annealed wet-chemical NiOx/Si interfaces in Perovskite/Si tandem solar cells. In Giso Hahn, Pierre Verlinden, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Robby Peibst, Jef Poortmans, Arthur Weeber (Eds.), AIP Conference Proceedings. Hybrid, Konstanz, DEU: American Institute of Physics Inc..
MLA:
Lange, Stefan, et al. "Ultrathin parasitic SiOzlayer formation at annealed wet-chemical NiOx/Si interfaces in Perovskite/Si tandem solar cells." Proceedings of the 12th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2022, Hybrid, Konstanz, DEU Ed. Giso Hahn, Pierre Verlinden, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Robby Peibst, Jef Poortmans, Arthur Weeber, American Institute of Physics Inc., 2023.
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