SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance
Seidel L, Liu T, Marzban B, Kiyek V, Schulze J, Capellini G, Witzens J, Buca D, Oehme M (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: IEEE Computer Society
Book Volume: 2023-April
Conference Proceedings Title: IEEE International Conference on Group IV Photonics GFP
Event location: Washington, DC
ISBN: 9781665486552
DOI: 10.1109/SiPhotonics55903.2023.10141960
Abstract
This paper reports on the electrical and optical characterization of a SiGeSn/GeSn multi quantum wells light emitting diode. At low temperatures, the devices show a direct bandgap behavior of the luminescence and a resonant tunneling transport.
Authors with CRIS profile
Additional Organisation(s)
Involved external institutions
Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
Germany (DE)
Universität Stuttgart
Germany (DE)
Peter Grünberg Institut (PGI, Forschungszentrum Jülich)
Germany (DE)
Università degli Studi Roma Tre
Italy (IT)
Germany (DE)
Universität Stuttgart
Germany (DE)
Peter Grünberg Institut (PGI, Forschungszentrum Jülich)
Germany (DE)
Università degli Studi Roma Tre
Italy (IT)
How to cite
APA:
Seidel, L., Liu, T., Marzban, B., Kiyek, V., Schulze, J., Capellini, G.,... Oehme, M. (2023). SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance. In IEEE International Conference on Group IV Photonics GFP. Washington, DC, US: IEEE Computer Society.
MLA:
Seidel, L., et al. "SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance." Proceedings of the 2023 IEEE Silicon Photonics Conference, SiPhotonics 2023, Washington, DC IEEE Computer Society, 2023.
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