MOSFET-Based RF Switch With Active Biasing
Solomko V, Syroiezhin S, Tayari D, Essel J, Weigel R (2023)
Publication Type: Journal article
Publication year: 2023
Journal
Pages Range: 1-9
DOI: 10.1109/TMTT.2023.3279909
Abstract
A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ability to sustain a desirable operating point under the peak RF excitation conditions achieved by compensating the excessive leakage current of FETs in the stack. Operating point stabilization results in improved RF voltage-handling capabilities of the OFF-state switch. A single-pole double-throw (SPDT) hardware demonstrator implemented in a dedicated 130-nm bulk-CMOS RF switch technology shows an increase in breakdown voltage by 10% for a 35-V voltage-handling class switch device. The improvement is achieved at the expense of increased peak current consumption and no penalty in the RF performance of the switch.
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Germany (DE)How to cite
APA:
Solomko, V., Syroiezhin, S., Tayari, D., Essel, J., & Weigel, R. (2023). MOSFET-Based RF Switch With Active Biasing. IEEE Transactions on Microwave Theory and Techniques, 1-9. https://dx.doi.org/10.1109/TMTT.2023.3279909
MLA:
Solomko, Valentyn, et al. "MOSFET-Based RF Switch With Active Biasing." IEEE Transactions on Microwave Theory and Techniques (2023): 1-9.
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