High-Voltage MOSFET-Based Stacked RF Switch with Extended Bandwidth Down to DC
Syroiezhin S, Weigel R, Solomko V (2023)
Publication Type: Journal article
Publication year: 2023
Journal
Pages Range: 1-1
DOI: 10.1109/LSSC.2023.3268089
Abstract
State-of-art stacked MOSFET-based RF switches cannot handle DC voltages exceeding maximum ratings of individual transistors in stack. In this paper a shunt switch constructed from stacked low-voltage transistors and capable of handling high DC and AC voltages in OFF-state is demonstrated for the first time. The DC voltage handling capability is achieved by introducing a resistive gate bias network coupled to the poles of the switch. An analytical model of the bias network is presented in the paper. A hardware prototype of the proposed device has been implemented in a dedicated 65 nm RF-switch SOI-CMOS process. The measurements of a 20-stack switch demonstrated peak RF and DC voltage handling of 20 V with the potential for further improvement and state-of-art linearity.
Authors with CRIS profile
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Syroiezhin, S., Weigel, R., & Solomko, V. (2023). High-Voltage MOSFET-Based Stacked RF Switch with Extended Bandwidth Down to DC. IEEE Solid-State Circuits Letters, 1-1. https://dx.doi.org/10.1109/LSSC.2023.3268089
MLA:
Syroiezhin, Semen, Robert Weigel, and Valentyn Solomko. "High-Voltage MOSFET-Based Stacked RF Switch with Extended Bandwidth Down to DC." IEEE Solid-State Circuits Letters (2023): 1-1.
BibTeX: Download