High temperature limit of semiconductor nanowire lasers
Zapf M, Ronning C, Roeder R (2017)
Publication Type: Journal article
Publication year: 2017
Journal
Book Volume: 110
Article Number: 173103
Journal Issue: 17
DOI: 10.1063/1.4982629
Abstract
Nanoscale light sources for intense laser emission based on CdS nanowires provide both an extremely localized emission and an ultrafast response even on sub-ps timescales. These fundamental mechanisms were investigated in the past, and practical device applications, such as on-chip laser driven applications working in different temperature ranges up to values far beyond room temperature, are becoming the focus of research. Here, we present a detailed study of the power dependent performance of CdS nanowire lasers which exhibit four distinct working regimes divided by certain threshold values. These regimes are spontaneous emission, amplified spontaneous emission, lasing, and a regime of vanishing laser oscillations due to active material degradation. The three threshold values bridging these four regimes are evaluated as a function of operating temperature, enabling the determination of an upper temperature limit for stable CdS nanowire lasing, at which the degradation threshold drops below the lasing threshold. Furthermore, the degradation mechanism of the CdS nanolasers will be proposed.
Involved external institutions
Germany (DE)How to cite
APA:
Zapf, M., Ronning, C., & Roeder, R. (2017). High temperature limit of semiconductor nanowire lasers. Applied Physics Letters, 110(17). https://doi.org/10.1063/1.4982629
MLA:
Zapf, Maximilian, Carsten Ronning, and Robert Roeder. "High temperature limit of semiconductor nanowire lasers." Applied Physics Letters 110.17 (2017).
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