Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching
Blumroder U, Zilk M, Hempel H, Hoyer P, Pertsch T, Eichberger R, Unold T, Nolte S (2017)
Publication Type: Journal article
Publication year: 2017
Journal
Book Volume: 25
Pages Range: 6604-6620
Journal Issue: 6
DOI: 10.1364/OE.25.006604
Abstract
The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.
Involved external institutions
Friedrich-Schiller-Universität Jena
Germany (DE)
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Germany (DE)
Germany (DE)
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Germany (DE)
How to cite
APA:
Blumroder, U., Zilk, M., Hempel, H., Hoyer, P., Pertsch, T., Eichberger, R.,... Nolte, S. (2017). Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching. Optics Express, 25(6), 6604-6620. https://dx.doi.org/10.1364/OE.25.006604
MLA:
Blumroder, Ulrike, et al. "Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching." Optics Express 25.6 (2017): 6604-6620.
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