Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy

Blumroeder U, Hempel H, Fuechsel K, Hoyer P, Bingel A, Eichberger R, Unold T, Nolte S (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 214

Article Number: 1600590

Journal Issue: 5

DOI: 10.1002/pssa.201600590

Abstract

The influence of near-surface crystal damage on carrier dynamics in silicon has been investigated with optical-pump THz-probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulator within semiconductor–insulator–semiconductor (SIS) solar cells. The ion bombardment during the plasma process introduces a highly damaged subsurface region. Furthermore, the integration of positive interface charges leads to the formation of a depletion region that can be detected via the emitted THz radiation. The results are compared with classic I–U-characterization demonstrating that THz spectroscopy can be used as a supplementary tool for the investigation of process-induced surface damages.

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How to cite

APA:

Blumroeder, U., Hempel, H., Fuechsel, K., Hoyer, P., Bingel, A., Eichberger, R.,... Nolte, S. (2017). Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy. physica status solidi (a), 214(5). https://dx.doi.org/10.1002/pssa.201600590

MLA:

Blumroeder, Ulrike, et al. "Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy." physica status solidi (a) 214.5 (2017).

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