In-volume structuring of silicon using picosecond laser pulses

Kaemmer H, Matthaeus G, Nolte S, Chanal M, Uteza O, Grojo D (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Applied Physics A: Materials Science and Processing Springer Verlag (Germany)

Book Volume: 124

Article Number: 302

Journal Issue: 4

DOI: 10.1007/s00339-018-1715-1

Abstract

We have demonstrated for the first time the permanent local modification of the bulk of silicon by repeated illumination with infrared (1.55 μm) picosecond pulses. Furthermore, we evaluated the characteristics of inscribing permanent modifications in the bulk material for different pulse durations from 0.8 to 10 ps in terms of their reproducibility and controllability of their morphology. Our results are based on a simple experimental setup that demonstrates the possibility of using picosecond pulses for the local modification of bulk silicon as a potential alternative to more complex irradiation strategies required for femtosecond pulse processing.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Aix-Marseille University / Aix-Marseille Université FR France (FR)

How to cite

APA:

Kaemmer, H., Matthaeus, G., Nolte, S., Chanal, M., Uteza, O., & Grojo, D. (2018). In-volume structuring of silicon using picosecond laser pulses. Applied Physics A: Materials Science and Processing, 124(4). https://doi.org/10.1007/s00339-018-1715-1

MLA:

Kaemmer, H., et al. "In-volume structuring of silicon using picosecond laser pulses." Applied Physics A: Materials Science and Processing 124.4 (2018).

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