Inscription of silicon waveguides using picosecond pulses

Matthaeus G, Kaemmer H, Lammers KA, Vetter C, Watanabe W, Nolte S (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Optics Express Optical Society of America

Book Volume: 26

Pages Range: 24089-24097

Journal Issue: 18

DOI: 10.1364/OE.26.024089

Abstract

Direct writing of single-mode waveguides into crystalline silicon using ps laser pulses is presented. The embedded structures were fabricated by moving the focal position along the beam axis with the help of a long distance microscope objective. In situ monitoring during inscription was performed to analyze the processing dynamics. The waveguide generation is based on pronounced multi-pulse interaction at moderate pulse energies around 100 nJ. All samples were characterized in terms of mode field distribution and damping losses. Calculations indicate an induced refractive index change in the range of 10−3 to 10−2. Moreover, a Y-splitter was realized to demonstrate the potential of this process.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Ritsumeikan University / 立命館大学 JP Japan (JP)

How to cite

APA:

Matthaeus, G., Kaemmer, H., Lammers, K.A., Vetter, C., Watanabe, W., & Nolte, S. (2018). Inscription of silicon waveguides using picosecond pulses. Optics Express, 26(18), 24089-24097. https://doi.org/10.1364/OE.26.024089

MLA:

Matthaeus, G., et al. "Inscription of silicon waveguides using picosecond pulses." Optics Express 26.18 (2018): 24089-24097.

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