Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation

Correa Jr GB, Kumar S, Paschoal Jr W, Devi C, Jacobsson D, Johannes A, Ronning C, Pettersson H, Paraguassu W (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Book Volume: 30

Article Number: 335202

Journal Issue: 33

DOI: 10.1088/1361-6528/ab1bea

Abstract

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm^-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.

Involved external institutions

Federal Institute of Pará / Instituto Federal de Educação, Ciência e Tecnologia do Pará (IFPA)

Brazil (BR) Central University of Rajasthan

India (IN) Universidade Federal do Pará (UFPA)

Brazil (BR) Lund University / Lunds universitet

Sweden (SE) Friedrich-Schiller-Universität Jena

Germany (DE)

How to cite

APA:

Correa Jr, G.B., Kumar, S., Paschoal Jr, W., Devi, C., Jacobsson, D., Johannes, A.,... Paraguassu, W. (2019). Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation. Nanotechnology, 30(33). https://doi.org/10.1088/1361-6528/ab1bea

MLA:

Correa Jr, Gregorio B., et al. "Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation." Nanotechnology 30.33 (2019).

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